National Scientific Corporation
Announces Successful Fabrication of Tunneling Diodes, New Memory
Posted By Kathy Smith
Date: October 02, 2001
National Scientific Corporation announced today that it has demonstrated tunneling effects in silicon-based diodes labs in Ireland.
SCOTTSDALE, Ariz., Oct. 2- National Scientific Corporation (OTC Bulletin Board: NSCT) announced today that it has demonstrated tunneling effects in silicon-based diodes at National Microelectronics Research Centre (NMRC) labs in Ireland. National Scientific also announced its recent filing of a patent for a tunneling diode-based DRAM device. Graham Clark, Director of Global Sales and Marketing, said, "The recent results obtained from our short loop tunnel diode experiment show that the CMOS process we are developing for this technology is experimentally viable. We are continuing with our development program and hope to have a fully optimized process for the manufacture of tunnel diodes available later this year."
Julie Donnelly, Central Fabrication Technology Manager of NMRC in Ireland, said, "The fabrication of NSC's tunneling diodes presented us with a unique set of technical challenges, and I am delighted that we were able to overcome so many of them to get these results."
President, Michael Grollman, stated, "The tunnel diode is the most critical and
by far the most challenging component of our TunnelMOS(TM) (or TMOS(TM)) SRAM
memory cell and other memory applications. With this quantifiable data from NMRC
in hand, we believe that we have a significantly compelling story to tell
prospective development partners about our technology. While we have made major
strides in the development of our technology there are still a number of
significant challenges to be overcome before our TMOS(TM) technology will be
fully demonstrated and ready for use in commercial applications."
The Company also announced that it has completed a recent filing for a patent on a novel DRAM architecture using its tunnel diode technology called TDRAM(TM), co-invented by Mr. Graham Clark and Dr. El-Badawy El-Sharawy. Regarding this new patent, Mr. Clark said, "During the past months we have been in discussion with some key industry leaders discussing the needs of the marketplace for an ultra-dense, ultra-low-power memory product that will be required for applications in the later part of this decade. While our TMOS(TM) SRAM product offers considerable improvements over conventional SRAM, the DRAM market is by far the largest memory segment. By applying our technology to this architecture we believe we can provide a DRAM-based memory that does not require constant refresh and therefore has a significant power advantage over existing DRAM technologies, in both standalone and embedded applications. From a business point of view we now have significant activity in SRAM, DRAM and NVM (Non-Volatile Memory) memories."
Mr. Grollman concluded by saying, "By listening to our customer needs and by applying our ADT designs to meet these needs, we are now moving into a very focused area of development and product application. We believe our memory technology can show some significant technical competitive advantage based on low-power consumption, chip scaling, and density for a variety of battery and main line applications. We also are pleased to announce the promotion of Mr. Graham Clark to Vice President of Technology Applications. This is a natural extension to his current role where he now has responsibility for bringing products out of the lab and into the marketplace. During the past months his contribution to the development of NSC's technology into specific applications has been vital to the company's progress. We are proud to have him on our team."
About National Scientific
National Scientific Corporation, headquartered in Scottsdale, Arizona, has developed the Atomy Digital Technology (ADT) family of electronic components and designs, all intended to service portable electronic OEM customers. ADT devices are designed for real-world applications where power and space are at the highest premium, such as SmartCards, mobile & PDA computing, cellular, general wireless and other general portable applications. The company's basket of technologies and patents covers a wide range of devices including fast ultra-low-power and ultra-dense memory, amplifiers, inductors, resonators, and other new high-efficiency versions of basic electronic designs. For more information about the company, its people, and its technology, please visit http://www.national-scientific.com.
Certain information and comments contained in this press release may be forward-looking statements (within the meaning of Section 27A of the Securities Act of 1933 and Section 21E of the Securities Exchange Act of 1934). Factors set forth in the company's Annual Report on Form 10-KSB for the fiscal year ended September 30, 2000, its subsequent Form 10-QSB filings together with other factors that appear in this press release or in the Company's other Securities and Exchange Commission filings could affect the Company's actual results and could cause the Company's actual results to differ materially from those expressed in any forward-looking statements made by, or on behalf of the company, in this press release. The Company undertakes no obligation to publicly release the results of any revisions to the forward-looking statements made in this press release to reflect events or circumstances after the date hereof, or to reflect the occurrence of unanticipated events.
For further information, please contact Karen Fuhre, Director of Investor Relations, (480) 948-8324, ext. 115, email@example.com.
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SOURCE National Scientific Corporation
Web site: http://www.national-scientific.com
Director of Investor Relations of NationalScientific Corporation
+1-480-948-8324, ext. 115,